LIQUID-PHASE EPITAXY OF HEAVILY TE DOPED GA1-XALXSB ON GASB

被引：7

作者：

GAUTIER, P ^{[1
]}

JOULLIE, A ^{[1
]}

BOUGNOT, G ^{[1
]}

CHAMPNESS, CH ^{[1
]}

机构：

[1] MCGILL UNIV,DEPT ELECT ENGN,MONTREAL H3A 2A7,QUEBEC,CANADA

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 51卷 / 02期

关键词：

D O I：

10.1016/0022-0248(81)90319-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：336 / 344

页数：9

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