NUCLEATION AND EPITAXIAL-GROWTH OF INAS ON SI (100) BY ION-ASSISTED DEPOSITION

被引：19

作者：

CHOI, CH ^{[1
]}

BARNETT, SA ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 22期

关键词：

D O I：

10.1063/1.102049

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2319 / 2321

页数：3

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