HETEROEPITAXY OF GAAS ON SI - THE EFFECT OF INSITU THERMAL ANNEALING UNDER ASH3

被引：46

作者：

FREUNDLICH, A

GRENET, JC

NEU, G

LEYCURAS, A

VERIE, C

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 23期

关键词：

D O I：

10.1063/1.99595

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1976 / 1978

页数：3

共 17 条

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[6]

FISHER R, 1985, J APPL PHYS, V58, P374

[7] EVIDENCE BY RAMAN-SPECTROSCOPY AND X-RAY-DIFFRACTION OF A STRONG INFLUENCE OF H2O TRACES ON THE METALORGANIC VAPOR-PHASE EPITAXY OF GAAS ON SI [J].

FREUNDLICH, A ;

LEYCURAS, A ;

GRENET, JC ;

VERIE, C ;

HUONG, PV .

APPLIED PHYSICS LETTERS, 1987, 51 (17) :1352-1354

[8]

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[9]

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