STRAINED-LAYER GA1-XINXAS/INP AVALANCHE PHOTODETECTORS

被引：17

作者：

GERSHONI, D

TEMKIN, H

PANISH, MB

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 14期

关键词：

D O I：

10.1063/1.100001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1294 / 1296

页数：3

共 13 条

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[4] TYPE-I TO TYPE-II SUPERLATTICE TRANSITION IN STRAINED LAYERS OF INXGA1-XAS GROWN ON INP [J].

GERSHONI, D ;

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HAMM, RA ;

PANISH, MB .

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[5] ELECTRONIC-ENERGY LEVELS IN INXGA1-XAS/INP STRAINED-LAYER SUPERLATTICES [J].

GERSHONI, D ;

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TEMKIN, H ;

PANISH, MB .

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[6]

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USHER, BF .

APPLIED PHYSICS LETTERS, 1987, 50 (15) :980-982

[8] GAS SOURCE MBE OF INP AND GAXIN1-XPYAS1-Y - MATERIALS PROPERTIES AND HETEROSTRUCTURE LASERS [J].

PANISH, MB ;

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SUMSKI, S .

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[9] MOLECULAR-BEAM EPITAXY OF GAAS AND INP WITH GAS SOURCES FOR ARSINE AND P [J].

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[10] EFFECTS OF COHERENCY STRAIN ON THE BAND-GAP OF PSEUDOMORPHIC INXGA1-XAS ON (001) INP [J].

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