ELECTRONIC-ENERGY LEVELS IN INXGA1-XAS/INP STRAINED-LAYER SUPERLATTICES

[1] MATERIAL PARAMETERS OF IN1-XGAXASYP1-Y AND RELATED BINARIES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) : 8775 - 8792

[2] ELECTRONIC STATES IN SEMICONDUCTOR HETEROSTRUCTURES [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1625 - 1644

[3] BAUER RS, 1987, PHYS TODAY, V40, P34

[4] Bir GL., 1974, SYMMETRY STRAIN INDU

[5] EFFECTS OF UNIAXIAL STRESS ON ELECTROREFLECTANCE SPECTRUM OF GE AND GAAS [J]. PHYSICAL REVIEW B, 1977, 15 (04): : 2127 - 2144

[6] RELATIONSHIP BETWEEN THE CONDUCTION-BAND DISCONTINUITIES AND BAND-GAP DIFFERENCES OF INGAASP/INP HETEROJUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1199 - 1201

[7] HENSEL JC, 1963, PHYS REV, V129, P1401

[8] ELECTRIC-FIELD DEPENDENCE OF OPTICAL-ABSORPTION NEAR THE BAND-GAP OF QUANTUM-WELL STRUCTURES [J]. PHYSICAL REVIEW B, 1985, 32 (02) : 1043 - 1060

[9] NISHI K, 1986, APPL PHYS LETT, V49, P194

[10] OSBOURN GC, 1984, MATER RES SOC S P, V25, P455

[1] MATERIAL PARAMETERS OF IN1-XGAXASYP1-Y AND RELATED BINARIES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) : 8775 - 8792

[2] ELECTRONIC STATES IN SEMICONDUCTOR HETEROSTRUCTURES [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1625 - 1644

[3] BAUER RS, 1987, PHYS TODAY, V40, P34

[4] Bir GL., 1974, SYMMETRY STRAIN INDU

[5] EFFECTS OF UNIAXIAL STRESS ON ELECTROREFLECTANCE SPECTRUM OF GE AND GAAS [J]. PHYSICAL REVIEW B, 1977, 15 (04): : 2127 - 2144

[6] RELATIONSHIP BETWEEN THE CONDUCTION-BAND DISCONTINUITIES AND BAND-GAP DIFFERENCES OF INGAASP/INP HETEROJUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1199 - 1201

[7] HENSEL JC, 1963, PHYS REV, V129, P1401

[8] ELECTRIC-FIELD DEPENDENCE OF OPTICAL-ABSORPTION NEAR THE BAND-GAP OF QUANTUM-WELL STRUCTURES [J]. PHYSICAL REVIEW B, 1985, 32 (02) : 1043 - 1060

[9] NISHI K, 1986, APPL PHYS LETT, V49, P194

[10] OSBOURN GC, 1984, MATER RES SOC S P, V25, P455