Defect lines and two-domain structure of hexagonal boron nitride films on Ni(111)

被引：150

作者：

Auwärter, W ^{[1
]}

Muntwiler, M ^{[1
]}

Osterwalder, J ^{[1
]}

Greber, T ^{[1
]}

机构：

[1] Univ Zurich, Inst Phys, CH-8057 Zurich, Switzerland

来源：

SURFACE SCIENCE | 2003年 / 545卷 / 1-2期

关键词：

scanning tunneling microscopy; photoelectron diffraction; nickel; boron nitride; surface defects;

D O I：

10.1016/j.susc.2003.08.046

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The growth of hexagonal boron nitride (h-BN) on Ni(1 1 1) at submonolayer coverages results in triangular islands with two different orientations. In combining X-ray photoelectron diffraction and scanning tunneling microscopy it is demonstrated that these two island types correspond to fcc and hcp domains of h-BN/Ni(1 1 1). The domain boundaries appear as defect lines that are also present in complete h-BN monolayers. Based on the experimental data, structural models for the two domains and the defect lines are discussed. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：L735 / L740

页数：6

共 12 条

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