One, step electrodeposition of CuInSe2: Improved structural, electronic, and photovoltaic properties by annealing under high selenium pressure

被引：111

作者：

Guillemoles, JF ^{[1
]}

Cowache, P ^{[1
]}

Lusson, A ^{[1
]}

Fezzaa, K ^{[1
]}

Boisivon, F ^{[1
]}

Vedel, J ^{[1
]}

Lincot, D ^{[1
]}

机构：

[1] CNRS, PHYS SOLIDES LAB, F-92195 MEUDON, FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 09期

关键词：

D O I：

10.1063/1.361446

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Films of Cu-In-Se alloys can be electrodeposited in a wide range of controlled composition. Annealing treatments under Se pressure transform these precursor films in large grain CuInSe2 films with improved electronic properties. These modifications are shown to depend on the Se pressure imposed during the treatment allowing a certain tailoring of the electronic properties of the films. The properties of electrodeposited/selenized films are presented as obtained from luminescence measurements, Hall effect, and photoelectrochemical characterization. An efficiency of 6.5% (total area, without antireflecting coating) is reported for the best CuInSe2/CdS/ZnO solar cell. An analysis of the device is also presented where limitations by interface recombination are shown to be the dominant loss mechanism. (C) 1996 American Institute of Physics.

引用

页码：7293 / 7302

页数：10