Electronic-Mechanical Coupling in Graphene from in situ Nanoindentation Experiments and Multiscale Atomistic Simulations

被引：262

作者：

Huang, Mingyuan ^{[1
]}

Pascal, Tod A. ^{[2
,3
]}

Kim, Hyungjun ^{[2
,3
]}

Goddard, William A., III ^{[2
,3
]}

Greer, Julia R. ^{[1
]}

机构：

[1] CALTECH, Div Engn & Appl Sci, Pasadena, CA 91125 USA

[2] Korea Adv Inst Sci & Technol, Ctr Mat Simulat & Design, Grad Sch EEWS, Taejon 305701, South Korea

[3] CALTECH, Mat & Proc Simulat Ctr, Pasadena, CA 91125 USA

来源：

NANO LETTERS | 2011年 / 11卷 / 03期

关键词：

Graphene; nanoindentation; strain; electronic properties; GAP;

D O I：

10.1021/nl104227t

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We present the in situ nanoindentation experiments performed on suspended graphene devices to introduce homogeneous tensile strain, while simultaneously carrying out electrical measurements. We find that the electrical resistance shows only a marginal change even under severe strain, and the electronic transport measurement confirms that there is no band gap opening for graphene under moderate uniform strain, which is consistent with our results from the first-principles informed molecular dynamics simulation.

引用

页码：1241 / 1246

页数：6

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