A physically based relation between extracted threshold voltage and surface potential flat-band voltage for MOSFET compact modeling

被引：18

作者：

Benson, J ^{[1
]}

D'Halleweyn, NV

Redman-White, W

Easson, CA

Uren, MJ

Faynot, O

Pelloie, JL

机构：

[1] Univ Southampton, Dept Elect & Comp Sci, Ctr Microelect, Southampton, Hants, England

[2] Def Evaluat & Res Agcy, Malvern, Worcs, England

[3] CEA, LETI, Grenoble, France

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 05期

关键词：

modeling; MOSFET; threshold voltage;

D O I：

10.1109/16.918258

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Compact MOS models based on surface potential are now firmly established, but for practical applications there is no reliable link between measured values of threshold voltage and the flat-band voltage on which such models are based. This brief presents an analytical relationship which may be implemented in compact models to provide a reliable and accurate threshold parameter input. Results are compared with a conventional threshold voltage model for several SOI CMOS technologies. This technique has been developed for use with body-tied SOI transistors, and hence it can also be applied to bulk devices.

引用

页码：1019 / 1021

页数：3

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