Measurement of silicon and GaAs/Ge solar cell device parameters

被引：24

作者：

Deshmukh, MP ^{[1
]}

Nagaraju, J ^{[1
]}

机构：

[1] Indian Inst Sci, Dept Instrumentat, Solar Energy & Thermodynam Lab, Bangalore 560012, Karnataka, India

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2005年 / 89卷 / 04期

关键词：

Si and GaAs/Ge solar cells; device parameters; temperature;

D O I：

10.1016/j.solmat.2005.01.005

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The device parameters (carrier lifetime, ideality factor), and physical parameters (built-in voltage, doping concentration) of silicon (Si) and gallium arsenide (GaAs/Ge) solar cells are measured at different temperatures using time domain technique. Carrier lifetime is calculated from open circuit voltage decay (OCVD). Built-in voltage and doping concentration are derived from the cell capacitance measured at different bias voltages. Ideality factor is derived from the I-V characteristics of solar cell. Carrier lifetime increases while built-in voltage decreases with increase in temperature. Ideality factor of the solar cell decreases with temperature. (C) 2005 Elsevier B.V. All rights reserved.

引用

页码：403 / 408

页数：6

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