Pseudomorphic strain effect on the charge-orbital ordering pattern in Pr0.5Sr0.5MnO3 epitaxial thin films -: art. no. 112513

被引:37
作者
Ogimoto, Y [1 ]
Takubo, N
Nakamura, M
Tamaru, H
Izumi, M
Miyano, K
机构
[1] Sharp Co Ltd, Devices Technol Res Labs, Nara 6328567, Japan
[2] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan
[3] Univ Tokyo, Adv Sci & Technol Res Ctr, Tokyo 1538904, Japan
基金
日本学术振兴会;
关键词
D O I
10.1063/1.1885191
中图分类号
O59 [应用物理学];
学科分类号
摘要
We accomplished coherent epitaxial growth of a Pr0.5Sr0.5MnO3 thin film on (LaAlO3)(0.3)-(SrAl0.5Ta0.5O3)(0.7) (110) substrate, which demonstrates a robust charge-orbital ordering (COO) phase transition. In addition to the isotropic transport properties, a drastic recovery of high-resistivity state (>20 Omega cm) from a field-cooled metallic state (similar to 0.5 m Omega cm) was observed at 5 K with a release of a magnetic field. These results indicate a possible modification of COO pattern into CE-type COO state [d(3x(2)-r(2)/3y(2)-r(2))] in the film from A-type stripe COO state [d(x(2)-y(2))] observed in bulk samples by a substrate-induced strain. (C) 2005 American Institute of Physics.
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页码:1 / 3
页数:3
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