Very-low-operating-voltage organic light-emitting diodes using a p-doped amorphous hole injection layer

被引：302

作者：

Zhou, X ^{[1
]}

Pfeiffer, M ^{[1
]}

Blochwitz, J ^{[1
]}

Werner, A ^{[1
]}

Nollau, A ^{[1
]}

Fritz, T ^{[1
]}

Leo, K ^{[1
]}

机构：

[1] Tech Univ Dresden, Inst Angew Photophys, D-01062 Dresden, Germany

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 04期

关键词：

D O I：

10.1063/1.1343849

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the use of a p-doped amorphous starburst amine, 4, 4', 4"-tris(N, N-diphenyl- amino)triphenylamine (TDATA), doped with a very strong acceptor, tetrafluoro- tetracyano-quinodimethane by controlled coevaporation as an excellent hole injection material for organic light-emitting diodes (OLEDs). Multilayered OLEDs consisting of double hole transport layers of p-doped TDATA and triphenyl-diamine, and an emitting layer of pure 8-tris-hydroxyquinoline aluminum exhibit a very low operating voltage (3.4 V) for obtaining 100 cd/m(2) even for a comparatively large (110 nm) total hole transport layer thickness. (C) 2001 American Institute of Physics.

引用

页码：410 / 412

页数：3

共 27 条

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