Charged exciton dynamics in GaAs quantum wells

被引:90
作者
Finkelstein, G [1 ]
Umansky, V
Bar-Joseph, I
Ciulin, V
Haacke, S
Ganiere, JD
Deveaud, B
机构
[1] Weizmann Inst Sci, Dept Condensed Matter Phys, IL-76100 Rehovot, Israel
[2] Swiss Fed Inst Technol, Dept Phys, Inst Micro & Optoelect, CH-1015 Lausanne, Switzerland
来源
PHYSICAL REVIEW B | 1998年 / 58卷 / 19期
关键词
D O I
10.1103/PhysRevB.58.12637
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study the dynamics of the charged and neutral excitons in a modulation-doped GaAs quantum well by time-resolved photoluminescence under a resonant excitation. The radiative lifetime of the charged exciton is found to be surprisingly short, 60 ps. This time is temperature independent between 2 and 10 K, and increases by a factor of 2 at 6 T. We discuss our findings in view of present theories of exciton radiative decay. [S0163-1829(98)03143-9].
引用
收藏
页码:12637 / 12640
页数:4
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