Activation and carrier mobility in high fluence B implanted germanium

被引：58

作者：

Mirabella, S. ^{[1
]}

Impellizzeri, G.

Piro, A. M.

Bruno, E.

Grimaldi, M. G.

机构：

[1] Univ Catania, INFM, CNR, MATIS, I-95123 Catania, Italy

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 25期

关键词：

D O I：

10.1063/1.2949088

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High doping regimes of B implanted Ge have been accurately characterized combining Hall effect technique and nuclear reaction analysis. Preamorphized Ge was implanted with B at 35 keV (spanning the 0.25-25x10(20) B/cm(3) concentration range) and recrystallized by solid phase epitaxy at 360 degrees C. The Hall scattering factor and the maximum concentration of active B resulted r(H)=1.21 and similar to 5.7x10(20) B/cm(3), respectively. The room-temperature carrier mobility was accurately measured, decreasing from similar to 300 to 50 cm(2)/V s in the investigated dopant density, and a fitting empirical law is given. These results allow reliable evaluation for Ge application in future microelectronic devices. (c) 2008 American Institute of Physics.

引用

页数：3

共 22 条

[1] HOLE MOBILITY MEASUREMENTS IN HEAVILY-DOPED SI1-XGEX STRAINED LAYERS [J].