Temperature and bias voltage dependence of Co/Pd multilayer-based magnetic tunnel junctions with perpendicular magnetic anisotropy

被引：18

作者：

Kugler, Zoe ^{[1
]}

Drewello, Volker ^{[1
]}

Schaefers, Markus ^{[1
]}

Schmalhorst, Jan ^{[1
]}

Reiss, Guenter ^{[1
]}

Thomas, Andy ^{[1
]}

机构：

[1] Univ Bielefeld, Dept Phys, D-33615 Bielefeld, Germany

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2011年 / 323卷 / 02期

关键词：

Perpendicular anisotropy; Magnetic tunnel junction; Spinelectronic; ROOM-TEMPERATURE; MAGNETORESISTANCE;

D O I：

10.1016/j.jmmm.2010.08.038

中图分类号：

T [工业技术];

学科分类号：

120111 [工业工程];

摘要：

Temperature- and bias voltage-dependent transport measurements of magnetic tunnel junctions(MTJs) with perpendicularly magnetized Co/Pd electrodes are presented. Magnetization measurements of the Co/Pd multilayers are performed to characterize the electrodes. The effects of the Co layer thickness in the Co/Pd bilayers, the annealing temperature, the Co thickness at the MgO barrier interface, and the number of bilayers on the tunneling magneto resistance (TMR) effect are investigated. TMR-ratios of about 11% at room temperature and 18.5% at 13K are measured and two well-defined switching fields are observed. The results are compared to measurements of MTJs with Co-Fe-B electrodes and in-plane anisotropy. (C) 2010 Elsevier B. V. All rights reserved.

引用

页码：198 / 201

页数：4

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