The amorphous range in sputtered Si-Al-Sn films

被引:25
作者
Hatchard, TD [1 ]
Dahn, JR [1 ]
Trussler, S [1 ]
Fleischauer, M [1 ]
Bonakdarpour, A [1 ]
Mueller-Neuhaus, JR [1 ]
Hewitt, KC [1 ]
机构
[1] Dalhousie Univ, Dept Phys, Halifax, NS B3H 3J5, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
aluminum-silicon-tin films; amorphous films; sputtering; X-ray diffraction;
D O I
10.1016/S0040-6090(03)01093-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A magnetron sputtering system modified to produce ternary films has been used to map large portions of the ternary phase diagram for the Si-Al-Sn system. The system is unconventional because the stoichiometries of the elements sputtered on the substrates vary linearly with position and in an orthogonal manner. Variations in the composition and structure vs. position were obtained by electron microprobe analysis and X-ray diffraction, respectively. We found that the amorphous range spans all compositions with over 60 at.% silicon. Compositions containing less than 50 at.% silicon were mixtures of the amorphous phase and Sn and/or Al. No intermetallic phases were observed. A ternary non-equilibrium 'phase diagram' showing the phases produced in the sputtered films was constructed. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:144 / 150
页数:7
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