Mechanical stress measurements using micro-Raman spectroscopy

被引：20

作者：

De Wolf, I ^{[1
]}

Maes, HE ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

MICROSYSTEM TECHNOLOGIES | 1998年 / 5卷 / 01期

关键词：

D O I：

10.1007/s005420050134

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The application of micro-Raman spectroscopy for measurements of mechanical stress in silicon microelectronics devices is discussed. The advantages and disadvantages of the technique are shown through different examples such as Si3N4 and metal lines, isolation structures and solder bumps.

引用

收藏

页码：13 / 17

页数：5

相关论文

共 10 条

[1] Polysilicon encapsulated local oxidation of silicon for deep submicron lateral isolation [J].

Badenes, G ;

Rooyackers, R ;

DeWolf, I ;

Deferm, L .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (3B) :1325-1329

[2] Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment [J].

DeWolf, I ;

Maes, HE ;

Jones, SK .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (09) :7148-7156

[3]

DeWolf I, 1996, SEMICOND SCI TECH, V11, P139, DOI 10.1088/0268-1242/11/2/001

[4] Experimental validation of mechanical stress models by micro-Raman spectroscopy [J].

DeWolf, I ;

Pozzat, G ;

Pinardi, K ;

Howard, DJ ;

Ignat, M ;

Jain, SC ;

Maes, HE .

MICROELECTRONICS AND RELIABILITY, 1996, 36 (11-12) :1751-1754

[5]

DeWolf I, 1995, MATER RES SOC SYMP P, V391, P109, DOI 10.1557/PROC-391-109

[6]

DEWOLF I, 1997, P MICR

[7]

HOWARD DJ, 1995, MATER RES SOC S P, P402

[8] LOCAL-OXIDATION-INDUCED STRESS MEASURED BY RAMAN MICROPROBE SPECTROSCOPY [J].

KOBAYASHI, K ;

INOUE, Y ;

NISHIMURA, T ;

HIRAYAMA, M ;

AKASAKA, Y ;

KATO, T ;

IBUKI, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (06) :1987-1989

[9]

LUTHI B, 1980, DYNAMICAL PROPERTIES

[10] HIGH-RESOLUTION DETERMINATION OF THE STRESS IN INDIVIDUAL INTERCONNECT LINES AND THE VARIATION DUE TO ELECTROMIGRATION [J].

MA, Q ;

CHIRAS, S ;

CLARKE, DR ;

SUO, Z .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (03) :1614-1622