From Mott insulator to overdoped superconductor: evolution of the electronic structure of cuprates studied by ARPES

被引：42

作者：

Damascelli, A ^{[1
]}

Lu, DH

Shen, ZX

机构：

[1] Stanford Univ, Dept Phys, Stanford, CA 94305 USA

[2] Stanford Univ, Stanford Synchrotron Radiat Lab, Stanford, CA 94305 USA

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 2001年 / 117卷

基金：

美国国家科学基金会;

关键词：

photoemission; ARPES; electronic structure; cuprates; Mott insulators; high temperature superconductors;

D O I：

10.1016/S0368-2048(01)00264-X

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

We review our angle-resolved photoemission spectroscopy (ARPES) results on different layered oxide superconductors, and on their insulating parent compounds. The low energy excitations are discussed with emphasis on some of the most recent issues, such as the Fermi surface and remnant Fermi surface, the pseudogap and d-wave-like dispersion, and lastly the signatures in the ARPES spectra of multiple electronic components, many body effects, and the superfluid density. We will focus on systematic changes in the electronic structure which may be relevant to the development of a comprehensive picture for the evolution from Mott insulators to overdoped superconductors. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：165 / 187

页数：23

共 152 条

[141] Rapid suppression of the superconducting gap in overdoped Bi2Sr2CaCu2O8+delta [J].