Identification of various luminescence centers in CuI films by cathodoluminescence technique

被引:32
作者
Sirimanne, PM [1 ]
Soga, T [1 ]
Jimbo, T [1 ]
机构
[1] Nagoya Inst Technol, Dept Environm Technol & Urban Planning, Showa Ku, Nagoya, Aichi 4668555, Japan
关键词
CuI films; expansion of band gap; cathodoluminescence; Cu+1 ions;
D O I
10.1016/S0022-2313(03)00114-5
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
CuI films are prepared by different techniques at room temperature. An expansion of band gap energy was observed for the thin films prepared by pulse laser deposition technique. Various luminescence centers are identified in CuI films and different mechanisms are proposed for cathodoluminescence at different centers. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:105 / 109
页数:5
相关论文
共 16 条
[11]   Electrochemical luminescence of ZnGa2O4 and ZnGa2O4:Mn electrodes [J].
Ohtake, T ;
Sonoyama, N ;
Sakata, T .
CHEMICAL PHYSICS LETTERS, 1998, 298 (4-6) :395-399
[12]   Monte Carlo study of transport properties in copper halides [J].
Sekkal, W ;
Zaoui, A .
PHYSICA B-CONDENSED MATTER, 2002, 315 (1-3) :201-209
[13]   Temperature dependence of the optical properties of CuMoO4 [J].
Steiner, G ;
Salzer, R ;
Reichelt, W .
FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY, 2001, 370 (06) :731-734
[14]  
Tolstoi N.A., 1971, SOV PHYS-SOLID STATE, V13, P1135
[15]   QUANTUM-SIZED PBS, CDS, AG2S, SB2S3, AND BI2S3 PARTICLES AS SENSITIZERS FOR VARIOUS NANOPOROUS WIDE-BANDGAP SEMICONDUCTORS [J].
VOGEL, R ;
HOYER, P ;
WELLER, H .
JOURNAL OF PHYSICAL CHEMISTRY, 1994, 98 (12) :3183-3188
[16]   Photoluminescence of Cu+-doped and Cu2+-doped ZnS anocrystallites [J].
Yang, P ;
Song, CF ;
Lü, MK ;
Zhou, GJ ;
Yang, ZX ;
Xu, D ;
Yuan, DR .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2002, 63 (04) :639-643