p-type conductivity in CuCr1-xMgxO2 films and powders

被引:398
作者
Nagarajan, R
Draeseke, AD
Sleight, AW
Tate, J
机构
[1] Oregon State Univ, Dept Chem, Corvallis, OR 97331 USA
[2] Oregon State Univ, Ctr Adv Mat Res, Corvallis, OR 97331 USA
[3] Oregon State Univ, Dept Phys, Corvallis, OR 97331 USA
关键词
D O I
10.1063/1.1372636
中图分类号
O59 [应用物理学];
学科分类号
摘要
CuCr1-xMgxO2, a wide band gap semiconductor with the delafossite structure, has been synthesized in bulk and thin-film form. Bulk undoped CuCrO2 is almost black and has moderate conductivity with p-type carriers. Upon doping with 5% Mg, the conductivity increases by a factor of 1000. In films, the best p-type conductivity is 220 S cm(-1) in CuCr0.95Mg0.05O2, a factor of 7 higher than previously reported for Cu-based p-type delafossites. Undoped films have a conductivity of order 1 S cm(-1). Films are usually polycrystalline on amorphous substrates, but undoped films can be c-axis oriented if deposited at or above 650 degreesC. Optical and ultraviolet transmission data indicate a direct band gap of 3.1 eV. (C) 2001 American Institute of Physics.
引用
收藏
页码:8022 / 8025
页数:4
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