Selective formation of Ohmic junctions and Schottky barriers with electrodeposited ZnO

被引：23

作者：

Chatman, Shawn ^{[1
]}

Ryan, Bernard J. ^{[1
]}

Poduska, Kristin M. ^{[1
]}

机构：

[1] Mem Univ Newfoundland, Dept Phys & Phys Oceanog, St John, NF A1B 3X7, Canada

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 01期

基金：

加拿大自然科学与工程研究理事会; 加拿大创新基金会;

关键词：

D O I：

10.1063/1.2828702

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Constant-potential electrochemical synthesis of ZnO on metal substrates enables selective formation of either Ohmic or Schottky-barrier contacts. Using a mildly acidic nitrate-based aqueous electrolyte, there is a substrate-dependent deposition potential below which electrodeposited ZnO heterojunctions display Schottky response with high contact resistances (similar to 10(5) Omega) and above which Ohmic behavior and low contact resistances (similar to 1 Omega) occur. Voltammetric evidence for Zn metal deposition, in conjunction with Schottky-barrier heights that are consistent with values expected for a ZnO-Zn junction, suggests that more negative deposition potentials create a Zn-based interface between the substrate and ZnO that leads to rectifying behavior. (c) 2008 American Institute of Physics.

引用

页数：3

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