Low-resistance Ti/Au ohmic contacts to Al-doped ZnO layers

被引：116

作者：

Kim, HK ^{[1
]}

Han, SH

Seong, TY

Choi, WK

机构：

[1] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[2] Korea Inst Sci & Technol, Thin Film Technol Res Ctr, Seoul 130720, South Korea

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 11期

关键词：

D O I：

10.1063/1.1308527

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on low-resistance ohmic contacts to the moderately doped n-type ZnO:Al(n(d)=2x10(17) cm(-3)) obtained using Ti (30 nm)/Au (50 nm) metallization schemes. Annealed Ti/Au contacts exhibit linear current-voltage characteristics, showing that high-quality ohmic contacts are formed. The Ti/Au scheme produces a specific contact resistance of 2x10(-4) Omega cm(2) when annealed at 300 degrees C for 1 min in a N-2 atmosphere. (C) 2000 American Institute of Physics. [S0003-6951(00)00537-4].

引用

页码：1647 / 1649

页数：3

共 17 条

[1] OPTICAL AND ELECTRICAL-PROPERTIES OF ZNO FILMS PREPARED BY SPRAY PYROLYSIS FOR SOLAR-CELL APPLICATIONS
ARANOVICH, J
ORTIZ, A
BUBE, RH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (04): : 994 - 1003
[2] OPTICAL AND ELECTRICAL-PROPERTIES OF GA2O3-DOPED ZNO FILMS PREPARED BY R.F. SPUTTERING
CHOI, BH
IM, HB
SONG, JS
YOON, KH
[J]. THIN SOLID FILMS, 1990, 193 (1-2) : 712 - 720
[3] GOULD RD, 1994, INT J ELECTRON, V76, P901
[4] OPTICAL GAIN AND INDUCED ABSORPTION FROM EXCITONIC MOLECULES IN ZNO
HVAM, JM
[J]. SOLID STATE COMMUNICATIONS, 1978, 26 (12) : 987 - 990
[5] Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN
Jang, JS
Chang, IS
Kim, HK
Seong, TY
Lee, SH
Park, SJ
[J]. APPLIED PHYSICS LETTERS, 1999, 74 (01) : 70 - 72
[6] OPTICAL-PROPERTIES OF TRANSPARENT AND HEAT REFLECTING ZNO-AL FILMS MADE BY REACTIVE SPUTTERING
JIN, ZC
HAMBERG, I
GRANQVIST, CG
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (03) : 149 - 151
[7] KIM HK, UNPUB J ELECTROCHEM
[8] LIDE DR, 1995, CRC HDB CHEM PHYSICS
[9] Determination of surface polarity of c-axis oriented ZnO films by coaxial impact-collision ion scattering spectroscopy
Ohnishi, T
Ohtomo, A
Kawasaki, M
Takahashi, K
Yoshimoto, M
Koinuma, H
[J]. APPLIED PHYSICS LETTERS, 1998, 72 (07) : 824 - 826
[10] Double heterostructure based on ZnO and MgxZn1-xO
Ohtomo, A
Kawasaki, M
Koida, T
Koinuma, H
Sakurai, Y
Yoshida, Y
Sumiya, M
Fuke, S
Yasuda, T
Segawa, Y
[J]. SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 1463 - 1466

← 1 2 →