Growth of high-quality ZnMgO epilayers and ZnO/ZnMgO quantum well structures by radical-source molecular-beam epitaxy on sapphire -: art. no. 091903

被引：113

作者：

Sadofev, S ^{[1
]}

Blumstengel, S ^{[1
]}

Cui, J ^{[1
]}

Puls, J ^{[1
]}

Rogaschewski, S ^{[1
]}

Schäfer, P ^{[1
]}

Sadofyev, YG ^{[1
]}

Henneberger, F ^{[1
]}

机构：

[1] Humboldt Univ, Inst Phys, D-12489 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 09期

关键词：

D O I：

10.1063/1.2034113

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a specific growth procedure combining low-temperature growth of ZnMgO and postgrowth annealing at intermediate temperatures. Despite the large lattice misfit induced by the sapphire substrate, layer-by-layer growth is accomplished up to the phase-separation limit found at a c-lattice constant of 0.5136 nm and Mg mole fraction of 0.40. The procedure allows us to grow quantum wells with atomically smooth interfaces in a wide range of structural designs exhibiting prominent emission features up to room temperature.

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页数：3

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