ZnMgO epilayers and ZnO-ZnMgO quantum wells for optoelectronic applications in the blue and UV spectral region

We have investigated the properties of ZnMgO epilayers and ZnO-ZnMgO quantum well structures grown by metalorganic vapor-phase epitaxy. A well-controlled incorporation of magnesium, xless than or equal to0.10, could be confirmed resulting in a blueshift of the photoluminescence emission wavelength of the Zn1-xMgxO layers up to 200 meV. Using ZnMgO as barrier material, ZnO-ZnMgO quantum well structures with different well widths have then been fabricated. The confinement effect in the ZnO quantum wells leads to the expected increase of the corresponding quantum well emission energy with decreasing well width. A comparison to calculations also suggests a further enhancement of the exciton binding energy in the quantum wells of up to 90 meV. (C) 2004 American Institute of Physics.