Kinetic roughening in etched Si

被引:12
作者
Dotto, MER [1 ]
Kleinke, MU [1 ]
机构
[1] UNICAMPAS, IFGW, DFA, Nanostruct Lab, Campinas, SP, Brazil
来源
PHYSICA A | 2001年 / 295卷 / 1-2期
关键词
AFM; scaling; percolation; etched surfaces and morphology;
D O I
10.1016/S0378-4371(01)00068-1
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In this work, surface morphology of Si etched surfaces generated with distinct physical constrains for attack, has been investigated by atomic force microscope (AFM). Statistical properties measured from AFM images prove that these surfaces present self-affine behavior; and also suggest that Si chemical attacks can be described as a 2+1 percolation inner random medium with quenched noise. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:149 / 153
页数:5
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