共 49 条
In Situ Investigations of SEI Layer Growth on Electrode Materials for Lithium-Ion Batteries Using Spectroscopic Ellipsometry
被引:76
作者:

McArthur, M. A.
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机构:
Dalhousie Univ, Dept Phys & Atmospher Sci, Halifax, NS B3H 3J5, Canada Dalhousie Univ, Dept Phys & Atmospher Sci, Halifax, NS B3H 3J5, Canada

Trussler, S.
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机构:
Dalhousie Univ, Dept Phys & Atmospher Sci, Halifax, NS B3H 3J5, Canada Dalhousie Univ, Dept Phys & Atmospher Sci, Halifax, NS B3H 3J5, Canada

Dahn, J. R.
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h-index: 0
机构:
Dalhousie Univ, Dept Phys & Atmospher Sci, Halifax, NS B3H 3J5, Canada Dalhousie Univ, Dept Phys & Atmospher Sci, Halifax, NS B3H 3J5, Canada
机构:
[1] Dalhousie Univ, Dept Phys & Atmospher Sci, Halifax, NS B3H 3J5, Canada
基金:
加拿大自然科学与工程研究理事会;
关键词:
THIN-FILM ELECTRODE;
FLUOROETHYLENE CARBONATE;
1ST PRINCIPLES;
NEGATIVE ELECTRODE;
PROTEIN ADSORPTION;
AMORPHOUS-SILICON;
OPTICAL FUNCTIONS;
REFRACTIVE-INDEX;
LI;
PERFORMANCE;
D O I:
10.1149/2.004203jes
中图分类号:
O646 [电化学、电解、磁化学];
学科分类号:
081704 ;
摘要:
Thin film electrodes of a-Si and TiN were prepared by magnetron sputtering for use with a custom-designed tubular in-situ spectroscopic ellipsometry (SE) electrochemical cell. Ellipsometric measurements on Li/a-Si in-situ cells with 0.1 MLiPF6/EC:DEC (1:2) electrolyte were made while cells were charged and discharged. Large reversible changes in the ellipsometric parameters, psi and Delta, were closely related to the state of charge of the in-situ cell. The transformation of semiconducting a-Si to metallic a-LixSi alloy and the formation of an SEI layer contributed to these large changes, which we were unable to decouple. Li/TiN cells were made so that the SEI forming process could be studied without competing reactions. The effect of vinylene carbonate (VC) and fluoroethylene carbonate (FEC) additives on SEI formation were studied. SEI thicknesses for cells containing no additives, VC, and FEC were roughly 18 nm, 25 nm and 30 nm, respectively, after a 10 h hold at 0.1 V vs Li/Li+. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.004203jes] All rights reserved.
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页码:A198 / A207
页数:10
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