Graphene nanostrip digital memory device

被引：133

作者：

Gunlycke, Daniel ^{[1
]}

Areshkin, Denis A. ^{[2
]}

Li, Junwen ^{[3
]}

Mintmire, John W. ^{[3
]}

White, Carter T. ^{[1
]}

机构：

[1] Naval Res Lab, Washington, DC 20375 USA

[2] George Washington Univ, Washington, DC 20052 USA

[3] Oklahoma State Univ, Stillwater, OK 74078 USA

来源：

NANO LETTERS | 2007年 / 7卷 / 12期

关键词：

D O I：

10.1021/nl0717917

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In equilibrium, graphene nanostrips, with hydrogens Sp(2)-bonded to carbons along their zigzag edges, are expected to exhibit a spin-polarized ground state. However, in the presence of a ballistic current, we find that there exists a voltage range over which both spin-polarized and spin-unpolarized nanostrip states are stable. These states can represent a bit in a binary memory device that could be switched through the applied bias and read by measuring the current through the nanostrip.

引用

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页码：3608 / 3611

页数：4

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