Semiconducting graphene nanostrips with edge disorder

被引：160

作者：

Gunlycke, D. ^{[1
]}

Areshkin, D. A.

White, C. T.

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] George Washington Univ, Washington, DC 20052 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 14期

关键词：

CARBON NANOTUBES; TRANSPORT; STATE;

D O I：

10.1063/1.2718515

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Results of calculations are presented which show that edge disorder can easily transform semiconducting graphene nanostrips into Anderson insulators. However, it is also shown that this problem could be overcome by adjusting the nanostrip aspect ratio to decrease the effects of the edge disorder without making the nanostrip so wide as to close the semiconducting band gap or so short as to allow tunneling through the band gap. (c) 2007 American Institute of Physics.

引用

页数：3

共 18 条

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