Changes in the electronic structure of CuInS2 thin films by Na incorporation

被引:23
作者
Fukuzaki, K [1 ]
Kohiki, S
Yoshikawa, H
Fukushima, S
Watanabe, T
Kojima, I
机构
[1] Kyushu Inst Technol, Fac Engn, Dept Mat Sci, Kitakyushu, Fukuoka 8048550, Japan
[2] Natl Inst Res Inorgan Mat, Tsukuba, Ibaraki 305, Japan
[3] Asahi Chem Ind Co Ltd, Fuji, Shizuoka 416, Japan
[4] Natl Inst Mat & Chem Res, Tsukuba, Ibaraki 305, Japan
关键词
D O I
10.1063/1.122168
中图分类号
O59 [应用物理学];
学科分类号
摘要
For Na-free and Cu-deficient CuInS2 thin films with chalcopyrite structure, electron spectra of core levels and valence band were similar to each other in spite of a difference in Cu deficiency. Incorporation of Na with the CuInS2 films caused peak shifts by -0.5 eV for the core levels without changes in both linewidth and shape. The electron density of states, deeper by 1-5 eV than that from Cu d-S p hybridization centered at around 2.5 eV, increased by the Na incorporation, and increments in the electron density of states, were larger for the films with larger the Cu deficiency. The Na incorporation yielded a surface layer expressed as (Na,Cu)InS2 on the Cu deficient CuInS2 films. (C) 1998 American Institute of Physics, [S0003-6951(98)03236-7].
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页码:1385 / 1387
页数:3
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