Inductively coupled radio frequency plasma chemical vapor deposition using a ladder-shaped antenna

被引：25

作者：

Murata, M ^{[1
]}

Takeuchi, Y ^{[1
]}

Sasagawa, E ^{[1
]}

Hamamoto, K ^{[1
]}

机构：

[1] MITSUBISHI HEAVY IND CO LTD,NAGASAKI SHIPYARD & ENGINE WORKS,NAGASAKI 85091,JAPAN

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1996年 / 67卷 / 04期

关键词：

D O I：

10.1063/1.1146885

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Radio-frequency (rf) excited SiH4 plasma is produced with an electrode of a ladder-shaped antenna which is positioned within a plasma chamber. The negative self-bias potential on the electrode is a few volts under a gas pressure 50 mTorr, rf power of 20-100 W. It was observed that the phase of the potential precedes the current fed to the electrode. Hydrogenated amorphous silicon films are formed on a 300 mmx300 mm substrate with a uniformity of +/-15%. (C) 1996 American Institute of Physics.

引用

页码：1542 / 1545

页数：4

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