Single-crystal α-GaN grown on a α-Ga2O3 template layer

被引：9

作者：

Kobayashi, NP ^{[1
]}

Kobayashi, JT ^{[1
]}

Choi, WJ ^{[1
]}

Dapkus, PD ^{[1
]}

机构：

[1] Univ So Calif, Compound Semicond Lab, Dept Mat Sci & Engn, Los Angeles, CA 90089 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 11期

关键词：

D O I：

10.1063/1.122218

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The mechanism for growth of single-crystal GaN on oxidized AlAs (AlOx) formed on a Si(111) substrate by metalorganic chemical vapor deposition has been studied. Cross-sectional transmission electron microscopy (XTEM) indicates that the grown GaN is single-crystal alpha-GaN in spite of the fact that the AlOx on which the GaN is grown is found to contain predominantly polycrystal gamma-Al2O3. Reflection high-energy electron diffraction (RHEED) shows that oriented crystallized alpha-Ga2O3 is formed between AlOx and the GaAs cap layer during the oxidation process. The alpha-Ga2O3 acts as a growth template and results in the crystalline orientation of alpha-GaN on polycrystal gamma-Al2O3. Further support for this template is derived from energy dispersive x-ray spectroscopy that shows the existence of Ga atoms on AlOx. Combined XTEM/RHEED analysis suggests that alpha-GaN is oriented in the growth direction as [0001](alpha-GaN)parallel to[0001](alpha-Ga2O3)parallel to[111](Si) and the in-plane direction as [2<(11)under bar>0](alpha-GaN)parallel to[1 (1) under bar 00](alpha-Ga2O3)parallel to[01 (1) under bar](Si), which can be understood by considering the misfit in the in-plane atomic separation at each interface. (C) 1998 American Institute of Physics.

引用

页码：1553 / 1555

页数：3

共 15 条

[1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J].

AKIYAMA, M ;

KAWARADA, Y ;

KAMINISHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11) :L843-L845

[2] Wet oxidation of AlxGa1-xAs: Temporal evolution of composition and microstructure and the implications for metal-insulator-semiconductor applications [J].

Ashby, CIH ;

Sullivan, JP ;

Newcomer, PP ;

Missert, NA ;

Hou, HQ ;

Hammons, BE ;

Hafich, MJ ;

Baca, AG .

APPLIED PHYSICS LETTERS, 1997, 70 (18) :2443-2445

[3] HYDROLYZATION OXIDATION OF ALXGA1-XAS-ALAS-GAAS QUANTUM-WELL HETEROSTRUCTURES AND SUPERLATTICES [J].

DALLESASSE, JM ;

HOLONYAK, N ;

SUGG, AR ;

RICHARD, TA ;

ELZEIN, N .

APPLIED PHYSICS LETTERS, 1990, 57 (26) :2844-2846

[4]

Guha S, 1996, APPL PHYS LETT, V68, P906, DOI 10.1063/1.116226

[5] Transmission electron microscopy study on defect reduction in GaAs on Si heteroepitaxial layers grown by metalorganic vapor phase epitaxy [J].

JinPhillipp, NY ;

Phillipp, F ;

Marschner, T ;

Stolz, W ;

Gobel, EO .

JOURNAL OF CRYSTAL GROWTH, 1996, 158 (1-2) :28-36

[6] Nucleation and growth behavior for GaN grown on (0001) sapphire via multistep growth approach [J].

Kobayashi, JT ;

Kobayashi, NP ;

Dapkus, PD .

JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (10) :1114-1117

[7] GaN growth on Si(111) substrate using oxidized AlAs as an intermediate layer [J].

Kobayashi, NP ;

Kobayashi, JT ;

Dapkus, PD ;

Choi, WJ ;

Bond, AE ;

Zhang, X ;

Rich, DH .

APPLIED PHYSICS LETTERS, 1997, 71 (24) :3569-3571

[8]

Lewis B., 1978, Nucleation and Growth of Thin Films

[9] WIDE-BANDWIDTH DISTRIBUTED BRAGG REFLECTORS USING OXIDE GAAS MULTILAYERS [J].

MACDOUGAL, MH ;

ZHAO, H ;

DAPKUS, PD ;

ZIARI, M ;

STEIER, WH .

ELECTRONICS LETTERS, 1994, 30 (14) :1147-1149

[10] HETEROEPITAXIAL WURTZITE AND ZINCBLENDE STRUCTURE GAN GROWN BY REACTIVE-ION MOLECULAR-BEAM EPITAXY - GROWTH-KINETICS, MICROSTRUCTURE, AND PROPERTIES [J].

POWELL, RC ;

LEE, NE ;

KIM, YW ;

GREENE, JE .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (01) :189-204

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