Single-mode surface-emitting quantum-cascade lasers -: art. no. 211102

被引：41

作者：

Pflügl, C

Austerer, M

Schrenk, W

Golka, S

Strasser, G

Green, RP

Wilson, LR

Cockburn, JW

Krysa, AB

Roberts, JS

机构：

[1] Vienna Univ Technol, Zentrum Mikro & Nanostrukturen, A-1040 Vienna, Austria

[2] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[3] Univ Sheffield, EPSRC Natl Ctr Technol 35, Sheffield S1 3JD, S Yorkshire, England

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 21期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.1929070

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present high-power surface-emitting second-order distributed feedback quantum-cascade lasers in GaAs and InP material systems. The GaAs device, grown by molecular-beam epitaxy, showed single-mode peak output powers of 3 W at 78 K in pulsed operation. With the InP-based devices, which are grown by metalorganic vapor phase epitaxy, we obtained single-mode peak output powers of 1 W at room temperature. These are the highest output powers for surface emission of quantum-cascade lasers reported so far. The InP-based distributed feedback lasers also have very low threshold current densities and are working well above room temperature. (c) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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