Large-Area Graphene Single Crystals Grown by Low-Pressure Chemical Vapor Deposition of Methane on Copper

被引：1108

作者：

Li, Xuesong ^{[2
,3
]}

Magnuson, Carl W. ^{[2
,3
]}

Venugopal, Archana ^{[4
]}

Tromp, Rudolf M. ^{[5
]}

Hannon, James B. ^{[5
]}

Vogel, Eric M. ^{[4
]}

Colombo, Luigi ^{[1
]}

Ruoff, Rodney S. ^{[2
,3
]}

机构：

[1] Texas Instruments Inc, Dallas, TX 75243 USA

[2] Univ Texas Austin, Dept Mech Engn, Austin, TX 78712 USA

[3] Univ Texas Austin, Texas Mat Inst, Austin, TX 78712 USA

[4] Univ Texas Dallas, Dept Elect Engn, Richardson, TX 75080 USA

[5] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2011年 / 133卷 / 09期

基金：

美国国家科学基金会;

关键词：

FILMS;

D O I：

10.1021/ja109793s

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Graphene single crystals with dimensions of up to 0.5 mm on a side were grown by low-pressure chemical vapor deposition in copper-foil enclosures using methane as a precursor. Low-energy electron microscopy analysis showed that the large graphene domains had a single crystallographic orientation, with an occasional domain having two orientations. Raman spectroscopy revealed the graphene single crystals to be uniform monolayers with a low D-band intensity. The electron mobility of graphene films extracted from field-effect transistor measurements was found to be higher than 4000 cm(2) V(-1) s(-1) at room temperature.

引用

页码：2816 / 2819

页数：4

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