Electronic desorption of alkyl monolayers from silicon by very highly charged ions

被引：29

作者：

Schenkel, T ^{[1
]}

Schneider, M

Hattass, M

Newman, MW

Barnes, AV

Hamza, AV

Schneider, DH

Cicero, RL

Chidsey, CED

机构：

[1] Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94550 USA

[2] Stanford Univ, Dept Chem, Stanford, CA 94305 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 06期

关键词：

D O I：

10.1116/1.590372

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Self-assembled alkyl monolayers on Si (111) were exposed to low doses of slow (upsilon approximate to 6.6 x 10(5) m/s approximate to 0.3 upsilon(Bohr)) , highly charged ions, like Xe41+ and Th73+. Atomic force microscope images show craters from single ion impacts with diameters of 50-63 nm. Emission of secondary ions by highly charged projectiles was monitored by time-of-flight secondary ion mass Spectrometry (TOF-SIMS). TOF-SIMS data give insights into the dependence of electronic desorption effects on the projectile charge state. We discuss the potential of highly charged projectiles as tools for materials modification on a nanometer scale. (C) 1998 American Vacuum Society. [S0734-211X(98)13306-1].

引用

页码：3298 / 3300

页数：3

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