X-ray characterization of dislocation density asymmetries in heteroepitaxial semiconductors

We demonstrate an x-ray rocking curve method which allows detection of an asymmetry in the dislocation densities in an heteroepitaxial (001) zinc blende semiconductor layer. These dislocations exist on two types of slip systems with their misfit dislocation line segments oriented along either a [1-10] direction (type A) or a [110] direction (type B). An imbalance in the densities of dislocations on these slip systems produces an observable azimuthal variation in the rocking curve width for symmetric x-ray reflections. An approximate quantitative model allows the estimation of the dislocation densities on the two types of slip systems. (C) 2008 American Institute of Physics.