Use of phosphine as an n-type dopant source for vapor-liquid-solid growth of silicon nanowires

被引：127

作者：

Wang, YF ^{[1
]}

Lew, KK ^{[1
]}

Ho, TT ^{[1
]}

Pan, L ^{[1
]}

Novak, SW ^{[1
]}

Dickey, EC ^{[1
]}

Redwing, JM ^{[1
]}

Mayer, TS ^{[1
]}

机构：

[1] Penn State Univ, Dept Elect Engn, Dept Mat Sci & Engn, University Pk, PA 16802 USA

来源：

NANO LETTERS | 2005年 / 5卷 / 11期

关键词：

D O I：

10.1021/nl051442h

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Phosphine (PH3) was investigated as an n-type dopant source for Au-catalyzed vapor-liquid-solid (VLS) growth of phosphorus-doped silicon nanowires (SiNWs). Transmission electron microscopy characterization revealed that the as-grown SiNWs were predominately single crystal even at high phosphorus concentrations. Four-point resistance and gate-dependent conductance measurements confirmed that electrically active phosphorus was incorporated into the SiNWs during VLS growth. A transition was observed from p-type conduction for nominally undoped SiNWs to n-type conduction upon the introduction of PH3 to the inlet gas. The resistivity of the n-type SiNWs decreased by approximately 3 orders of magnitude as the inlet PH3 to silane (SiH4) gas ratio was increased from 2 x 10(-5) to 2 x 10(-3). These results demonstrate that PH3 can be used to produce n-type SiNWs with properties that are suitable for electronic and optoelectronic device applications.

引用

页码：2139 / 2143

页数：5

共 22 条

[1]

[Anonymous], NATURE CHEM BOND

[2] Diameter-controlled synthesis of silicon nanowires using nanoporous alumina membranes [J].

Bogart, TE ;

Dey, S ;

Lew, KK ;

Mohney, SE ;

Redwing, JM .

ADVANCED MATERIALS, 2005, 17 (01) :114-+

[3]

CASEY HC, 1999, DEVICE INTEGRATED CI

[4] Silicon nanowire devices [J].

Chung, SW ;

Yu, JY ;

Heath, JR .

APPLIED PHYSICS LETTERS, 2000, 76 (15) :2068-2070

[5] Functional nanoscale electronic devices assembled using silicon nanowire building blocks [J].

Cui, Y ;

Lieber, CM .

SCIENCE, 2001, 291 (5505) :851-853

[6] High performance silicon nanowire field effect transistors [J].

Cui, Y ;

Zhong, ZH ;

Wang, DL ;

Wang, WU ;

Lieber, CM .

NANO LETTERS, 2003, 3 (02) :149-152

[7] Doping and electrical transport in silicon nanowires [J].

Cui, Y ;

Duan, XF ;

Hu, JT ;

Lieber, CM .

JOURNAL OF PHYSICAL CHEMISTRY B, 2000, 104 (22) :5213-5216

[8] PARAMETERS FOR SCALING THE CORRELATION-ENERGY OF THE BONDS SI-H, P-H, S-H, AND CL-H AND APPLICATION TO THE REACTION OF SILYL RADICAL WITH SILANE [J].

GORDON, MS ;

NGUYEN, KA ;

TRUHLAR, DG .

JOURNAL OF PHYSICAL CHEMISTRY, 1989, 93 (21) :7356-7358

[9] Logic gates and computation from assembled nanowire building blocks [J].

Huang, Y ;

Duan, XF ;

Cui, Y ;

Lauhon, LJ ;

Kim, KH ;

Lieber, CM .

SCIENCE, 2001, 294 (5545) :1313-1317

[10] Template-directed vapor-liquid-solid growth of silicon nanowires [J].

Lew, KK ;

Reuther, C ;

Carim, AH ;

Redwing, JM ;

Martin, BR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (01) :389-392

← 1 2 3 →