Practical OEIC's based on the monolithic integration of GaAs-InGaP LED's with commercial GaAs VLSI electronics

被引：14

作者：

Ahadian, JF ^{[1
]}

Vaidyanathan, PT

Patterson, SG

Royter, Y

Mull, D

Petrich, GS

Goodhue, WD

Prasad, S

Kolodziejski, LA

Fonstad, CG

机构：

[1] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

[2] Northeastern Univ, Dept Elect & Comp Engn, Boston, MA 02115 USA

[3] MIT, Lincoln Lab, Lexington, MA 02173 USA

[4] Univ Massachusetts, Dept Phys & Appl Phys, Lowell, MA 01854 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1998年 / 34卷 / 07期

基金：

美国国家科学基金会;

关键词：

integrated optoelectronics; light-emitting diodes; monolithic integrated circuits; optical interconnections; very large scale integration;

D O I：

10.1109/3.687852

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recent advances in the Epitaxy-on-Electronics (EoE) integration process, which combines commercial GaAs VLSI electronics with conventional epitaxial growth and fabrication to produce complex, monolithic optoelectronic integrated circuits (OEIC's), have resulted in improved integrated light-emitting diodes (LED's), eliminated any impact on the preexisting electronics, and increased the robustness of the integration process. An EoE-integrated OEIC combining a photodetector, electronics, and LED is presented which demonstrates the capability of this technology to now satisfy practical optoelectronic systems requirements.

引用

页码：1117 / 1123

页数：7

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