Below band-gap nonlinear optical properties of semiconductor-doped glasses

被引：2

作者：

Banfi, GP ^{[1
]}

Degiorgio, V ^{[1
]}

Fortusini, D ^{[1
]}

Tan, HM ^{[1
]}

机构：

[1] ACAD SINICA, CHANGCHUN INST OPT & FINE MECH, CHANGCHUN, PEOPLES R CHINA

来源：

JOURNAL OF NONLINEAR OPTICAL PHYSICS & MATERIALS | 1996年 / 5卷 / 02期

关键词：

D O I：

10.1142/S0218863596000167

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Through nonlinear transmission and wave-mixing measurements, combined with structural data from neutron scattering, we obtain the below band-gap third-order susceptibility chi((3)) (both imaginary and real part) and the refractive-index-change per carrier of semiconductor nanocrystals embedded in a glass matrix. Our data covers a range of crystal radii between 2 and 14 nm and a range of ratios y = E(g)/(<(h)over bar omega>), where E(g) is the energy gap of the semiconductor and <(h)over bar omega> is the energy of the incident photon, between 1.1 and 1.9. The magnitude of chi((3)) and its dependence on y are comparable to those of related bulk semiconductors.

引用

页码：205 / 222

页数：18

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