共 5 条
[1]
Integration of trench DRAM into a high-performance 0.18 μm logic technology with copper BEOL
[J].
INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST,
1998,
:1017-1020
[2]
Dennard Robert H., 1968, U.S. Patent, Patent No. 3387286
[3]
KOYANAGI M, 1978, IEDM, P348
[4]
PRINCE B, 1991, SEMICONDUCTOR MEMORI