Deposition of ZnS thin films by photochemical deposition technique

被引：41

作者：

Gunasekaran, M

Gopalakrishnan, R ^{[1
]}

Ramasamy, P

机构：

[1] Anna Univ, Dept Phys, Madras 600025, Tamil Nadu, India

[2] Natl Taiwan Univ, Dept Chem Engn, Taipei 10617, Taiwan

[3] Anna Univ, Ctr Crystal Growth, Madras 600025, Tamil Nadu, India

来源：

MATERIALS LETTERS | 2004年 / 58卷 / 1-2期

关键词：

deposition; photochemical technology; semiconductors; thin films; ZnS; surface morphology;

D O I：

10.1016/S0167-577X(03)00416-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnS thin films have been deposited on a glass substrate by photochemical deposition (PCD) technique from an aqueous solution. The effect of pH and stirring speed of the solution on deposition has been studied. The optical transmission spectra of the solutions have been recorded before and after deposition and also for the deposited film. The as-deposited and annealed films were characterized by X-ray diffraction (XRD) and it is observed that the crystallinity of the deposited films is improved by annealing at various temperature from 100 to 500 degreesC. The surface coverage of the film has been studied using optical microscope. (C) 2003 Elsevier B.V. All rights reserved.

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页码：67 / 70

页数：4

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