Re-entrant peak effect in an anisotropic superconductor 2H-NbSe2:: Role of disorder

被引:16
作者
Banerjee, SS
Patil, NG
Ramakrishnan, S
Grover, AK
Bhattacharya, S
Mishra, PK
Ravikumar, G
Rao, TVC
Sahni, VC
Higgins, MJ
Tomy, CV
Balakrishnan, G
Paul, DM
机构
[1] Tata Inst Fundamental Res, Bombay 400005, Maharashtra, India
[2] Bhabha Atom Res Ctr, TPPED, Bombay 400085, Maharashtra, India
[3] NEC Res Inst, Princeton, NJ 08540 USA
[4] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
[5] NEC Res Inst, Princeton, NJ 08540 USA
[6] Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, India
来源
EUROPHYSICS LETTERS | 1998年 / 44卷 / 01期
关键词
D O I
10.1209/epl/i1998-00440-4
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The influence of disorder (induced by pinning centres) on the peak effect (PE) phenomenon, namely, an anomalous increase in J(c) vs. H (or T), has been studied in the anisotropic superconductor 2H-NbSe2. Results from new electrical transport as well as de and ac magnetic response studies are presented to demonstrate that increasing disorder shrinks the (H, T) parameter space over which the vortex lattice retains spatial order. We find that the re-entrant nature of PE is clearly manifested only in crystals which have moderate amount of disorder. We also find that the upper branch of the PE curve is fairly robust, whereas the lower re-entrant branch is strongly affected by disorder.
引用
收藏
页码:91 / 97
页数:7
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