A fast and simple methodology for lifetime prediction of ultra-thin oxides

被引：49

作者：

Nigam, T ^{[1
]}

Degraeve, R ^{[1
]}

Groeseneken, G ^{[1
]}

Heyns, MM ^{[1
]}

Maes, HE ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

1999 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 37TH ANNUAL | 1999年

关键词：

D O I：

10.1109/RELPHY.1999.761643

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A fast and simple method has been introduced to calculate the t(BD) in ultra-thin oxides. This method is based on monitoring the increase of the current during stress. This new method allows one to determine the maximum voltage at which a gate oxide will comply with 10 year lifetime, taking into account both tBD -spread and area dependence.

引用

页码：381 / 388

页数：8

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