Ga2O3(Gd2O3)/GaAs power MOSFETs

被引：16

作者：

Wang, YC ^{[1
]}

Hong, M ^{[1
]}

Kuo, JM ^{[1
]}

Mannaerts, JP ^{[1
]}

Tsai, HS ^{[1
]}

Kwo, J ^{[1
]}

Krajewski, JJ ^{[1
]}

Chen, YK ^{[1
]}

Cho, AY ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 08期

关键词：

D O I：

10.1049/el:19990456

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The power performance of GaAs MOSFETs using Ga2O3(Gd2O3) as the gale dielectric is presented. The I-V characteristics of the power devices are virtually free of hysteresis, indicating low interface state density in the oxide/GaAs interface. When operated at 850MHz cellular frequency and tuned for maximum output power, maximum power-added efficiencies of 45 and 56% were obtained under 3 and 5V operation, respectively. An output power of 26.5dBm was measured from a 1 mu m x 2.4mm device under 5V operation. These results show that the developed GaAs MOSFETs are promising candidates for microwave power amplifiers.

引用

页码：667 / 669

页数：3