Rectifying electrical characteristics of La0.7Sr0.3MnO3/ZnO heterostructure

被引：80

作者：

Tiwari, A ^{[1
]}

Jin, C ^{[1
]}

Kumar, D ^{[1
]}

Narayan, J ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 09期

关键词：

D O I：

10.1063/1.1605801

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated a p-n junction, consisting of p-type manganite (La0.7Sr0.3MnO3) and n-type ZnO layers grown on sapphire substrate. This junction exhibits excellent rectifying behavior over the temperature range 20-300 K. Electrical characteristics of La0.7Sr0.3MnO3 (LSMO) film in this heterostructure are found to be strongly modified by the built-in electric field at the junction. It has been shown that by applying the external bias voltage, the thickness of the depletion layer, and hence, the electrical and magnetic characteristics of LSMO film can precisely be modified. (C) 2003 American Institute of Physics.

引用

页码：1773 / 1775

页数：3

共 16 条

[1] A STRUCTURAL PHASE-TRANSITION INDUCED BY AN EXTERNAL MAGNETIC-FIELD [J].

ASAMITSU, A ;

MORITOMO, Y ;

TOMIOKA, Y ;

ARIMA, T ;

TOKURA, Y .

NATURE, 1995, 373 (6513) :407-409

[2] Bi2O3 as an effective sintering aid for La(Sr)MnO3 powder prepared by autoignition route [J].

Chakraborty, A ;

Maiti, HS .

CERAMICS INTERNATIONAL, 1999, 25 (02) :115-123

[3] Atomically defined epitaxy and physical properties of strained La0.6Sr0.4MnO3 films [J].

Izumi, M ;

Konishi, Y ;

Nishihara, T ;

Hayashi, S ;

Shinohara, M ;

Kawasaki, M ;

Tokura, Y .

APPLIED PHYSICS LETTERS, 1998, 73 (17) :2497-2499

[4] THOUSANDFOLD CHANGE IN RESISTIVITY IN MAGNETORESISTIVE LA-CA-MN-O FILMS [J].

JIN, S ;

TIEFEL, TH ;

MCCORMACK, M ;

FASTNACHT, RA ;

RAMESH, R ;

CHEN, LH .

SCIENCE, 1994, 264 (5157) :413-415

[5] Anomalous strain effect in La0.8Ba0.2MnO3 epitaxial thin film:: Role of the orbital degree of freedom in stabilizing ferromagnetism -: art. no. 224418 [J].

Kanki, T ;

Tanaka, H ;

Kawai, T .

PHYSICAL REVIEW B, 2001, 64 (22)

[6] Photocarrier injection effect on double exchange ferromagnetism in (La, Sr)MnO3/SrTiO3 heterostructure [J].

Katsu, H ;

Tanaka, H ;

Kawai, T .

APPLIED PHYSICS LETTERS, 2000, 76 (22) :3245-3247

[7] Ferromagnetic resonance and magnetic homogeneity in a giant-magnetoresistance material La2/3Ba1/3MnO3 [J].

Lofland, SE ;

Bhagat, SM ;

Ju, HL ;

Xiong, GC ;

Venkatesan, T ;

Greene, RL .

PHYSICAL REVIEW B, 1995, 52 (21) :15058-15061

[8] p-n diode with hole- and electron-doped lanthanum manganites [J].

Mitra, C ;

Raychaudhuri, P ;

Köbernik, G ;

Dörr, K ;

Müller, KH ;

Schultz, L ;

Pinto, R .

APPLIED PHYSICS LETTERS, 2001, 79 (15) :2408-2410

[9] Giant electric field modulation of double exchange ferromagnetism at room temperature in the perovskite manganite/titanate p-n junction -: art. no. 027204 [J].

Tanaka, H ;

Zhang, J ;

Kawai, T .

PHYSICAL REVIEW LETTERS, 2002, 88 (02) :4

[10] Epitaxial growth of ZnO films on si(111) [J].

Tiwari, A ;

Park, M ;

Jin, C ;

Wang, H ;

Kumar, D ;

Narayan, J .

JOURNAL OF MATERIALS RESEARCH, 2002, 17 (10) :2480-2483

← 1 2 →