Epitaxial growth of ZnO films on si(111)

被引：48

作者：

Tiwari, A ^{[1
]}

Park, M ^{[1
]}

Jin, C ^{[1
]}

Wang, H ^{[1
]}

Kumar, D ^{[1
]}

Narayan, J ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

来源：

JOURNAL OF MATERIALS RESEARCH | 2002年 / 17卷 / 10期

关键词：

D O I：

10.1557/JMR.2002.0361

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we report the growth of ZnO films on silicon substrates using a pulsed laser deposition technique. These films were deposited on SO (111) directly as well as by using thin buffer layers of AIN and GaN. All the films were found to have c-axis-preferred orientation aligned with normal to the substrate. Films with AIN and GaN buffer layers were epitaxial with preferred in-plane orientation, while those directly grown on Si(111) were found to have random in-plane orientation. A decrease in the frequency of the E-2((2)) Raman mode and a red shift of the band-edge photoluminescence peak due to the presence of tensile strain in the film, was observed. Various possible sources for the observed biaxial strain are discussed.

引用

页码：2480 / 2483

页数：4

共 12 条

[1] Direct evidence of tensile strain in wurtzite structure n-GaN layers grown on n-Si(111) using AlN buffer layers [J].

Bairamov, BH ;

Gürdal, O ;

Botchkarev, A ;

Morkoç, H ;

Irmer, G ;

Monecke, J .

PHYSICAL REVIEW B, 1999, 60 (24) :16741-16746

[2] High-pressure Raman spectroscopy study of wurtzite ZnO [J].

Decremps, F ;

Pellicer-Porres, J ;

Saitta, AM ;

Chervin, JC ;

Polian, A .

PHYSICAL REVIEW B, 2002, 65 (09) :921011-921014

[3] Influence of processing variables on the structure and properties of ZnO films [J].

Exarhos, GJ ;

Sharma, SK .

THIN SOLID FILMS, 1995, 270 (1-2) :27-32

[4] Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substrates [J].

Konkar, A ;

Madhukar, A ;

Chen, P .

APPLIED PHYSICS LETTERS, 1998, 72 (02) :220-222

[5] PRESSURE-INDUCED PHONON FREQUENCY SHIFTS MEASURED BY RAMAN SCATTERING [J].

MITRA, SS ;

BRAFMAN, O ;

DANIELS, WB ;

CRAWFORD, RK .

PHYSICAL REVIEW, 1969, 186 (03) :942-&

[6] LARGE-BAND-GAP SIC, III-V NITRIDE, AND II-VI ZNSE-BASED SEMICONDUCTOR-DEVICE TECHNOLOGIES [J].

MORKOC, H ;

STRITE, S ;

GAO, GB ;

LIN, ME ;

SVERDLOV, B ;

BURNS, M .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (03) :1363-1398

[7] Epitaxial growth of ZnO films on Si substrates using an epitaxial GaN buffer [J].

Nahhas, A ;

Kim, HK ;

Blachere, J .

APPLIED PHYSICS LETTERS, 2001, 78 (11) :1511-1513

[8] Making nonmagnetic semiconductors ferromagnetic [J].

Ohno, H .

SCIENCE, 1998, 281 (5379) :951-956

[9] Similarities in the bandedge and deep-centre photoluminescence mechanisms of ZnO and GaN [J].

Reynolds, DC ;

Look, DC ;

Jogai, B ;

Morkoc, H .

SOLID STATE COMMUNICATIONS, 1997, 101 (09) :643-646

[10]

Shirasawa T, 1997, MATER RES SOC SYMP P, V449, P373

← 1 2 →