Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substrates

被引：99

作者：

Konkar, A ^{[1
]}

Madhukar, A ^{[1
]}

Chen, P ^{[1
]}

机构：

[1] Univ So Calif, Dept Mat Sci, Photon Mat & Devices Lab, Los Angeles, CA 90089 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 02期

关键词：

D O I：

10.1063/1.120691

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The lattice-mismatch stress-induced two-dimensional-to-three-dimensional morphology change is combined with interfacet adatom migration to selectively assemble parallel chains of InAs islands on top of [1(1) over bar0$] oriented stripe mesas of sub-100-nm widths on GaAs(001) substrates. On such mesa stripes, prepared in situ via size-reducing epitaxy, deposition of InAs amounts subcritical for island formation on planar GaAs (001) is shown to allow self-assembly of three, two, and single chains of InAs three-dimensional island quantum dots selectively on the stripe mesa tops for widths decreasing from 100 nm down to 30 nm. (C) 1998 American Institute of Physics.

引用

页码：220 / 222

页数：3

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