Assembling strained InAs islands on patterned GaAs substrates with chemical beam epitaxy

被引：95

作者：

Jeppesen, S

Miller, MS

Hessman, D

Kowalski, B

Maximov, I

Samuelson, L

机构：

[1] Department of Solid State Physics, Lund University, Box 118

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 16期

关键词：

D O I：

10.1063/1.115867

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The assembly of strained InAs islands was manipulated through growth on patterned GaAs substrates with chemical beam epitaxy. Conditions were found to selectively place the islands in patterns features but not on surrounding unpatterned fields. Chains of islands having 33 nm minimum periods were formed in trenches, and single or few islands were grown in arrays of holes. When capped with GaAs, the islands behave as quantum dots and are optically active. (C) 1996 American Institute of Physics.

引用

页码：2228 / 2230

页数：3

共 22 条

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