High electrical activation of aluminium and nitrogen implanted in 6H-SiC at room temperature by RF annealing

被引:18
作者
Lazar, M
Ottaviani, L
Locatelli, ML
Raynaud, C
Planson, D
Morvan, E
Godignon, P
Skorupa, W
Chantel, JP
机构
[1] INSA Lyon, UMR CNRS 5005, CEGELY, FR-69621 Villeurbanne, France
[2] CSIC, Ctr Nacl Microelect, ES-08193 Bellaterra, Spain
[3] Forschungszentrum Rossendorf EV, DE-01314 Dresden, Germany
来源
SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷
关键词
AFM; annealing; electrical activation; ion implantation; recrystallization; SIMS;
D O I
10.4028/www.scientific.net/MSF.353-356.571
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Al and N implantations were carried out in 6H-SiC n-type epitaxial layers at room temperature. RBS/C analysis confirms the presence of an amorphous layer up to the surface in the as-implanted samples. The samples rf-annealed at 1700 degreesC during 30 mn with a preliminary 40 degreesC per second heating slope are recrystallised in RBS/C analysis terms. SIMS measurements show no dopant loosing after the annealing and dopant profile distributions are in agreement with CNM Monte-Carlo simulation. A good surface stoichiometry is revealed by XPS after annealing but AFM surface measurements reveal a relatively high rns roughness (14 nm) on annealed samples. High electrical activation of dopants was found, 19 k Omega/square sheet resistance: which corresponds to 50 % electrical dopant activation for Al implanted layer, and 6.7 k Omega/square sheet resistance and 100% electrical activation for N-implanted layer.
引用
收藏
页码:571 / 574
页数:4
相关论文
共 9 条
[1]   Dopant activation and surface morphology of ion implanted 4H and 6H silicon carbide [J].
Capano, MA ;
Ryu, S ;
Melloch, MR ;
Cooper, JA ;
Buss, MR .
JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (04) :370-376
[2]  
GHEZZO M, 1999, IEEE ELECTR DEVICE L, V13, P639
[3]   Improved annealing process for 6H-SiC p+-n junction creation by Al implantation [J].
Lazar, M ;
Ottaviani, L ;
Locatelli, ML ;
Planson, D ;
Canut, B ;
Chante, JP .
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 :921-924
[4]   Montecarlo simulation of ion implantation into SiC-6H single crystal including channeling effect [J].
Morvan, E ;
Godignon, P ;
Montserrat, J ;
Fernandez, J ;
Flores, D ;
Millan, J ;
Chante, JP .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 46 (1-3) :218-222
[5]   POLYTYPE TRANSITIONS IN ION-IMPLANTED SILICON-CARBIDE [J].
PEZOLDT, J ;
KALNIN, AA ;
MOSKWINA, DR ;
SAVELYEV, WD .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 :943-948
[6]  
POTAPOV YN, 1987, PRIKL VOPR FIZ TVERD, V1, P88
[7]   Implantation of Al and B acceptors into alpha-SiC and pn junction diodes [J].
Takemura, O ;
Kimoto, T ;
Matsunami, H ;
Nakata, T ;
Watanabe, M ;
Inoue, M .
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :701-704
[8]  
Troffer T, 1997, PHYS STATUS SOLIDI A, V162, P277, DOI 10.1002/1521-396X(199707)162:1<277::AID-PSSA277>3.0.CO
[9]  
2-C