High-performance solution-deposited n-channel organic transistors and their complementary circuits

被引：92

作者：

Yoo, Byungwook

Jones, Brooks A.

Basu, Debarshi

Fine, Daniel

Jung, Taeho

Mohapatra, Siddharth

Facchetti, Antonio

Dimmler, Klaus

Wasielewski, Michael R.

Marks, Tobin J.

Dodabalapur, Ananth

机构：

[1] Univ Texas Austin, Dept Elect & Comp Engn, Austin, TX 78758 USA

[2] Northwestern Univ, Int Inst Nanotechnol, Evanston, IL 60208 USA

[3] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

[4] OrganicID, Colorado Springs, CO 80906 USA

来源：

ADVANCED MATERIALS | 2007年 / 19卷 / 22期

关键词：

D O I：

10.1002/adma.200700064

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High-performance, n-channel organic transistors are prepared from an air-stable, n-type organic semiconductor, and their complementary organic circuits, in which both p- and n-channel materials are solution deposited, are presented. Ring oscillators and D flip-lops fabricated from the transistors operate in air without passivation or packaging.

引用

收藏

页码：4028 / +

页数：6

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