A 4 V Operation, Flexible Braille Display Using Organic Transistors, Carbon Nanotube Actuators, and Organic Static Random-Access Memory

被引：115

作者：

Fukuda, Kenjiro ^{[12
]}

Sekitani, Tsuyoshi ^{[1
]}

Zschieschang, Ute ^{[2
]}

Klauk, Hagen ^{[2
]}

Kuribara, Kazunori ^{[12
]}

Yokota, Tomoyuki ^{[12
]}

Sugino, Takushi ^{[3
]}

Asaka, Kinji ^{[3
]}

Ikeda, Masaaki ^{[4
]}

Kuwabara, Hirokazu ^{[4
]}

Yamamoto, Tatsuya ^{[5
]}

Takimiya, Kazuo ^{[5
]}

Fukushima, Takanori ^{[6
]}

Aida, Takuzo ^{[7
]}

Takamiya, Makoto ^{[8
]}

Sakurai, Takayasu ^{[9
,12
]}

Someya, Takao ^{[1
,10
,11
,12
]}

机构：

[1] Univ Tokyo, Dept Elect & Elect Engn, Bunkyo Ku, Tokyo 1138656, Japan

[2] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany

[3] Natl Inst Adv Ind Sci & Technol, Res Inst Cell Engn, Osaka 5638577, Japan

[4] Nippon Kayaku Co Ltd, Funct Chem R&D Labs, Kita Ku, Tokyo 1158588, Japan

[5] Hiroshima Univ, Dept Appl Chem, Hiroshima 7398527, Japan

[6] RIKEN, Funct Soft Matter Engn Lab, Adv Sci Inst, Wako, Saitama 3510198, Japan

[7] Univ Tokyo, Dept Chem & Biotechnol, Bunkyo Ku, Tokyo 1138656, Japan

[8] Univ Tokyo, VLSI Design & Educ Ctr, Meguro Ku, Tokyo 1538505, Japan

[9] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

[10] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan

[11] Core Res Evolut Sci & Technol, Chiyoda Ku, Tokyo 1020075, Japan

[12] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan

来源：

ADVANCED FUNCTIONAL MATERIALS | 2011年 / 21卷 / 21期

关键词：

FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; GATE DIELECTRICS; THRESHOLD-VOLTAGE; AIR; CIRCUITS; NETWORKS; MOBILITY; SENSORS; COPPER;

D O I：

10.1002/adfm.201101050

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A sheet-type Braille display operating at 4 V has been successfully fabricated by integrating organic an static random-access memory (SRAM) array with carbon nanotube (CNT)-based actuators that are driven by organic thin-film transistors (control-TFTs). The on current of organic control-TFTs that drive CNT actuators exceeds 3 mA, the mobility exceeds 1 cm(2) V(-1)s(-1), and the on/off ratio exceeds 10(5) at an operational voltage of 3 V. By adjusting the process time for the formation of the aluminum oxide dielectrics, the threshold voltage of the organic TFTs can be systematically controlled. This technique leads to an improved static noise margin of the SRAM and enables its stable operation with a short programming time of 2 ms at a programming voltage of 2 V. As a demonstration of the operation of one actuator with one control-TFT and SRAM: the displacement of actuator exceeds 300 mu m at an operation voltage of 4 V, which is large enough for a blind person to recognize the pop-up of braille dots. Integrating the SRAM array reduces the frame rate of a 12 dot x 12 dot display from 1/21.6 s to 1/2.9 s.

引用

页码：4019 / 4027

页数：9

共 36 条

[1] Organic non-volatile memories from ferroelectric phase-separated blends [J].

Asadi, Kamal ;

De Leeuw, Dago M. ;

De Boer, Bert ;

Blom, Paul W. M. .

NATURE MATERIALS, 2008, 7 (07) :547-550

[2] New air-stable n-channel organic thin film transistors [J].

Bao, ZA ;

Lovinger, AJ ;

Brown, J .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1998, 120 (01) :207-208

[3] Printable ion-gel gate dielectrics for low-voltage polymer thin-film transistors on plastic [J].

Cho, Jeong Ho ;

Lee, Jiyoul ;

Xia, Yu ;

Kim, Bongsoo ;

He, Yiyong ;

Renn, Michael J. ;

Lodge, Timothy P. ;

Frisbie, C. Daniel .

NATURE MATERIALS, 2008, 7 (11) :900-906

[4] Large-scale complementary integrated circuits based on organic transistors [J].

Crone, B ;

Dodabalapur, A ;

Lin, YY ;

Filas, RW ;

Bao, Z ;

LaDuca, A ;

Sarpeshkar, R ;

Katz, HE ;

Li, W .

NATURE, 2000, 403 (6769) :521-523

[5] PMMA-Ta2O5 bilayer gate dielectric for low operating voltage organic FETs [J].

Deman, AL ;

Tardy, J .

ORGANIC ELECTRONICS, 2005, 6 (02) :78-84

[6] Vapor phase self-assembly of molecular gate dielectrics for thin film transistors [J].

DiBenedetto, Sara A. ;

Frattarelli, David ;

Ratner, Mark A. ;

Facchetti, Antonio ;

Marks, Tobin J. .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2008, 130 (24) :7528-+

[7] Preparation of gold-solid polymer electrolyte composites as electric stimuli-responsive materials [J].

Fujiwara, N ;

Asaka, K ;

Nishimura, Y ;

Oguro, K ;

Torikai, E .

CHEMISTRY OF MATERIALS, 2000, 12 (06) :1750-1754

[8] Effects of annealing on electronic and structural characteristics of pentacene thin-film transistors on polyimide gate dielectrics [J].

Fukuda, Kenjiro ;

Sekitani, Tsuyoshi ;

Someya, Takao .

APPLIED PHYSICS LETTERS, 2009, 95 (02)

[9] Thermal stability of organic thin-film transistors with self-assembled monolayer dielectrics [J].

Fukuda, Kenjiro ;

Yokota, Tomoyuki ;

Kuribara, Kazunori ;

Sekitani, Tsuyoshi ;

Zschieschang, Ute ;

Klauk, Hagen ;

Someya, Takao .

APPLIED PHYSICS LETTERS, 2010, 96 (05)

[10] Effects of the alkyl chain length in phosphonic acid self-assembled monolayer gate dielectrics on the performance and stability of low-voltage organic thin-film transistors [J].

Fukuda, Kenjiro ;

Hamamoto, Takanori ;

Yokota, Tomoyuki ;

Sekitani, Tsuyoshi ;

Zschieschang, Ute ;

Klauk, Hagen ;

Someya, Takao .

APPLIED PHYSICS LETTERS, 2009, 95 (20)

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